Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 119 A ID @ TC = 100°C Co...
IRFU4104: Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ...
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Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 119 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 84 | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) |
42 | |
IDM | Pulsed Drain Current | 480 | |
PD @TC = 25°C | Power Dissipation | 140 | W |
Linear Derating Factor | 0.95 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS (Thermally limited) | Single Pulse Avalanche Energy | 145 | mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
310 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. | 10 lbf`in (1.1N`m) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU4104 utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of the IRFU4104 design are a 175°C junction operating temperature,fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.