Position: Home  > All Categories> Integrated Circuits (ICs) > IRFW614B

IRFW614B

Features: • 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V• Low gate charge ( typical 8.1 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW614B / IRFI614B Unit VDSS ...

product image

IRFW614B Picture
See larger image
SeekIC No. : 004377532 Detail

IRFW614B: Features: • 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V• Low gate charge ( typical 8.1 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested• Im...

IRFW614B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFW614B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V
• Low gate charge ( typical 8.1 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRFW614B / IRFI614B Unit

VDSS

Drain-Source Voltage

 250 V

ID

Drain Current    - Continuous (TC = 25°C)
                         - Continuous (TC = 100°C)

2.8

A

 1.8

 A

IDM

Drain Current    - Pulsed                                 (Note 1)

 8.5 A
VGSS Gate-Source Voltage ± 30 V

EAS

 Single Pulsed Avalanche Energy                     (Note 2) 45 mJ

IAR

 Avalanche Current                                          (Note 1)

2.8

A

EAR

Repetitive Avalanche Energy                          (Note 1)

4.0

mJ

 dv/dt

 Peak Diode Recovery dv/dt                            (Note 3)

 5.5

 V/ns

PD

Power Dissipation (TA = 25°C) *


3.13

W

 Power Dissipation (TC = 25°C)
                              - Derate above 25°C

 40

 W

 0.32

 W/

TJ, Tstg

Operating and Storage Temperature Range

-55 to +150

TL

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300




Description

These N-Channel enhancement mode power field effect transistors IRFW614B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices IRFW614B are well suited for high efficiency switching DC/DC converters and switch mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Line Protection, Backups
BX0023
A20B-1008-0550
Resistors
A101G
3006P-1-205LF
Optoelectronics
SFH7770
TLP423J
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Cable Assemblies
CS1W-CN114
XW2Z-500T
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more