IRFW634B

Features: • 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V• Low gate charge ( typical 29 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW634B / IRFI634B Unit VDSS ...

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SeekIC No. : 004377536 Detail

IRFW634B: Features: • 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V• Low gate charge ( typical 29 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Imp...

floor Price/Ceiling Price

Part Number:
IRFW634B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

• 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter IRFW634B / IRFI634B Unit

VDSS

Drain-Source Voltage

250 V

ID

Drain Current    - Continuous (TC = 25°C)
                         - Continuous (TC = 100°C)

8.1

A

5.1

 A

IDM

Drain Current    - Pulsed                                 (Note 1)

32.4 A
VGSS Gate-Source Voltage ± 30 V

EAS

Single Pulsed Avalanche Energy                     (Note 2) 200 mJ

IAR

Avalanche Current                                          (Note 1)

8.1

A

EAR

Repetitive Avalanche Energy                          (Note 1)

7.4

mJ

 dv/dt

 Peak Diode Recovery dv/dt                            (Note 3)

 5.5

 V/ns

PD

Power Dissipation (TA = 25°C) *


3.13

W

 Power Dissipation (TC = 25°C)
                              - Derate above 25°C

74

 W

 0.59

 W/

TJ, Tstg

Operating and Storage Temperature Range

-55 to +150

TL

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300




Description

These N-Channel enhancement mode power field effect transistors IRFW634B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices IRFW634B are well suited for high efficiency switching DC/DC converter and switch mode power supplies.




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