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IRFW/I840A

Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10mA (Max.) @ VDS = 500V Lower RDS(ON): 0.638W (Typ.)Specifications Symbol Parameter Value Units VDSS Drain to Source Vol...

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IRFW/I840A: Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10mA (Max.) @ VDS = 500V Lower RD...

IRFW/I840A Data Sheet

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Part Number:
IRFW/I840A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10mA (Max.) @ VDS = 500V
Lower RDS(ON): 0.638W (Typ.)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 500 V
ID Continuous Drain Current(@TC = 25) 8 A
Continuous Drain Current(@TC = 100) 5.1
IDM Drain Current Pulsed                 (1) 32 A
VGS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy  (2) 640 mJ
IAR Avalanche Current (1) 8 A
EAR Repetitive Avalanche Energy       (1) 14.2 mJ
dv/dt Peak Diode Recovery dv/dt          (3) 3.5 V/ns
PD Total Power Dissipation(TA = 25 )* 3.1 W
Derating Factor above (TC = 25 ) 142
1.14		 W
W/
TSTG, TJ Operating Junction and
Storage Temperature Range		 - 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds		 300

* When mounted on the minimum pad size recommended (PCB Mount).




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