Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`175 Operating Temperature`Lower Leakage Current: 10 A (Max.) VDS@= 60V`Lower RDS(ON): 0.020 (Typ.)Specifications Symbol Characteristic Value ...
IRFW/IZ44A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology `Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`175 Operating Temperature`Lower Leakage Current: 10 A (...
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Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved G...
Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improv...
Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
60 |
V |
ID |
Continuous Drain Current (TC=25) |
50 |
A |
Continuous Drain Current (TC=100) |
35.4 | ||
IDM |
Drain Current-Pulsed(1) |
200 |
A |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulsed Avalanche Energy(2) |
857 |
mJ |
IAR |
Avalanche Current(1) |
50 |
A |
EAR |
Repetitive Avalanche Energy(1) |
12.6 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt(3) |
5.5 |
V/ns |
PD |
Total Power Dissipation (TA =25)* |
3.8 |
W |
Total Power Dissipation (TC=25) Linear Derating Factor |
126 0.84 |
W W/ | |
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |