IRFZ14S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.2 Ohms


Features:

· Advanced Process Technology
· Surface Mount (IRFZ14S)
· Low-profile through-hole (IRFZ14L)
· 175°C Operating Temperature
· Fast Switching


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	10	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	7.2
IDM	Pulsed Drain Current	40
PD @TA = 25°C	Power Dissipation	3.7	W
PD @TC = 25°C	Power Dissipation	43	W
	Linear Derating Factor	0.29	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	47	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Thermal Resistance

	Parameter	Typ.	Max.	Units
RJC	Junction-to-Case	-	3.5	°C/W
RJA	Junction-to-Ambient( PCB Mounted,steady-state)**	-	40

Description

Third Generation HEXFETs from International Rectifier IRFZ14S  utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ14S design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRFZ14S  is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak IRFZ14S  is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ14S ) is available for lowprofile applications.