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IRFZ24NS

MOSFET N-CH 55V 17A D2PAK

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SeekIC No. : 004377605 Detail

IRFZ24NS: MOSFET N-CH 55V 17A D2PAK

IRFZ24NS Data Sheet

floor Price/Ceiling Price

US $ .67~.67 / Piece | Get Latest Price
Part Number:
IRFZ24NS
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~400
  • Unit Price
  • $.67
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 68
PD @TC = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 45 W
  Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalance Energy 71 mJ
IAR Avalance Current 10 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 6.8 V/ns
TJ
Tstg		 Operating Junction and
Storage Temperature Range		 -55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Fifth Generation HEXFETs from International Rectifier IRFZ24NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24NS design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRFZ24NS is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ24NS provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRFZ24NS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NS) is available for lowprofile applications.




Parameters:

Technical/Catalog InformationIRFZ24NS
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs70 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 370pF @ 25V
Power - Max3.8W
PackagingBulk
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFZ24NS
IRFZ24NS



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