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IRFZ34VLPbF

MOSFET N-CH 60V 30A TO-262

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SeekIC No. : 004377616 Detail

IRFZ34VLPbF: MOSFET N-CH 60V 30A TO-262

IRFZ34VLPbF Data Sheet

floor Price/Ceiling Price

US $ .37~.69 / Piece | Get Latest Price
Part Number:
IRFZ34VLPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~10
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  • 100~250
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  • Unit Price
  • $.69
  • $.51
  • $.47
  • $.45
  • $.42
  • $.4
  • $.37
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21
IDM Pulsed Drain Current 120
PD @TC = 25°C Power Dissipation 70 W
  Linear Derating Factor 0.46 W/°C
VGS Gate-to-Source Voltage ±20 V
IAR Avalance Current 30 A
EAR Repetitive Avalanche Energy 7.0 mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
TJ
Tstg		 Operating Junction and
Storage Temperature Range		 -55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ34VLPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRFZ34VLPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRFZ34VLPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ34VLPbF) is available for lowprofile application.




Parameters:

Technical/Catalog InformationIRFZ34VLPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs28 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 1120pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs49nC @ 10V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFZ34VLPBF
IRFZ34VLPBF



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