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IRFZ40

MOSFET N-Chan 50V 50 Amp

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SeekIC No. : 00158856 Detail

IRFZ40: MOSFET N-Chan 50V 50 Amp

IRFZ40 Data Sheet

floor Price/Ceiling Price

US $ 1.68~1.8 / Piece | Get Latest Price
Part Number:
IRFZ40
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~715
  • 715~1000
  • 1000~2000
  • Unit Price
  • $1.8
  • $1.73
  • $1.68
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 50 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 35 A
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 0.028 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Specifications

Symbol Parameter Value Unit
IRFZ40 IRFZ40FI
VDS Drain-source Voltage (VGS = 0) 50 50 V
VDGR Drain- gate Voltage (RGS = 20 k) 50 50 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (cont.) at Tc = 25 oC 50 27 A
ID Drain Current (cont.) at Tc = 100 oC 35 19 A
IDM(•) Drain Current (pulsed) 200 200 A
Ptot Total Dissipation at Tc = 25 oC 150 45 W
Derating Factor 1 0.3 W/oC
VISO Insulation Withstand Voltage (DC) - 2000 V
Tstg Storage Temperature -65 to 175 oC
Tj Max. Operating Junction Temperature 175 oC



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