IRFZ44NL

MOSFET N-CH 55V 49A TO-262

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SeekIC No. : 003433646 Detail

IRFZ44NL: MOSFET N-CH 55V 49A TO-262

floor Price/Ceiling Price

Part Number:
IRFZ44NL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 49A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 63nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1470pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 63nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 3.8W
Current - Continuous Drain (Id) @ 25° C: 49A
Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds: 1470pF @ 25V
Supplier Device Package: TO-262


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35
IDM Pulsed Drain Current 160
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 94 W
  Linear Derating Factor 0.63 W/°C
VGS Gate-to-Source Voltage ±20 V
IAR Avalance Current 25 A
EAR Repetitive Avalanche Energy 9.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
Tstg
Operating Junction and
Storage Temperature Range
-55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ44NL design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRFZ44NL is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ44NL provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRFZ44NL is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ44NL) is available for lowprofile applications.




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