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MFG:IR
Part Number: IRFZ46N
MFG: IR
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...
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IRFZ46N
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DataSheet
General Description
IRFZ46N General Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRFZ46N Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 53 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 37 | |
| IDM | Pulsed Drain Current | 180 | |
| PD @TC = 25°C | Power Dissipation | 107 | W |
| Linear Derating Factor | 0.71 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| IAR | Avalance Current | 28 | A |
| EAR | Repetitive Avalanche Energy | 11 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to +175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
IRFZ46N
PDF/DataSheet Download
- Datasheet: IRFZ46N
- File Size: 87358 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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