IRFZ46NLPBF

MOSFET MOSFT 55V 53A 16.5mOhm 48nC

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SeekIC No. : 00145810 Detail

IRFZ46NLPBF: MOSFET MOSFT 55V 53A 16.5mOhm 48nC

floor Price/Ceiling Price

US $ .48~1.09 / Piece | Get Latest Price
Part Number:
IRFZ46NLPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.09
  • $.7
  • $.51
  • $.48
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 53 A
Mounting Style : Through Hole Package / Case : TO-262
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-262
Continuous Drain Current : 53 A


Features:

` Advanced Process Technology
`Surface Mount (IRFZ46NS)
`Low-profile through-hole (IRFZ46NL)
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated
`Lead-Free



Specifications

Parameter
Maximum
Units
ID @ TC=25
Continuous Drain Current,VGS @-10V
53
A
ID @ TC=100
Continuous Drain Current,VGS @-10V
37
IDM
Pulsed Drain Current
180
PD@ TA= 25
Power Dissipation
3.8
W
PD@ TC= 25
Power Dissipation
107
Linear Derating Factor
0.71
W/
VGS
Gate-to-Source Voltage
±20
V
IAR
Avalanche Current
28
A
EAR
Repetitive Avalanche Energy
11
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/nS
Tj,TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
 
Parameter
Typ
Max.
Units
RJC
RJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
-
-
1.4
40
/W



Description

Advanced HEXFET®  Power MOSFETs from International Rectifier IRFZ46NLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device IRFZ46NLPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.

The D2Pak IRFZ46NLPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRFZ46NLPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ46NLPbF) is available for low-profile applications.




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