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Part Number: IRFZ46NLPbF

 

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Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proc...


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IRFZ46NLPbF General Description


Advanced HEXFET®  Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ46NL) is available for low-profile applications.

IRFZ46NLPbF Maximum Ratings

Parameter
Maximum
Units
ID @ TC=25
Continuous Drain Current,VGS @-10V
53
A
ID @ TC=100
Continuous Drain Current,VGS @-10V
37
IDM
Pulsed Drain Current
180
PD@ TA= 25
Power Dissipation
3.8
W
PD@ TC= 25
Power Dissipation
107
Linear Derating Factor
0.71
W/
VGS
Gate-to-Source Voltage
±20
V
IAR
Avalanche Current
28
A
EAR
Repetitive Avalanche Energy
11
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/nS
Tj,TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
 
Parameter
Typ
Max.
Units
RJC
RJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
-
-
1.4
40
/W

IRFZ46NLPbF Features

` Advanced Process Technology
`Surface Mount (IRFZ46NS)
`Low-profile through-hole (IRFZ46NL)
`175 Operating Temperatur
`Fast Switching
`Fully Avalanche Rated
`Lead-Free

IRFZ46NLPbF datasheet

IRF034
PDF/DataSheet Download

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