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MFG:IR  Package Cooled:TO-263  D/C:5000  

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Part Number: IRFZ48RL

 

MFG: IR

Package Cooled: TO-263

D/C: 5000

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...


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IRFZ48RL General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance

IRFZ48RL Maximum Ratings

 
Parameter
Maximum
Units
ID @ TA = 25 Continuous Drain Current, VGS @ 10V
50*
A
ID @ TA = 70 Continuous Drain Current, VGS @ 10V
50*
IDM Pulsed Drain Current
290
PD @TA = 25 Power Dissipation
190
W
  Linear Derating Factor
1.3
mW/
VGS Linear Derating Factor
± 20
V
EAS Single Pulse Avalanche Energy
100
 
dv/dt Peak Diode Recovery dv/dt
4.5
V/ns
TJ,TSTG Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to +150

300 (1.6mm from case )

  Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)

IRFZ48RL Features

` Advanced Process Technology
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Drop in Replacement of the IRFZ48 for Linear/Audio Applications

IRFZ48RL datasheet

IRF034
PDF/DataSheet Download

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