Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48R utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48R design ...
The IRFZ48NSPbF and IRFZ48NLPbF has 7 features.The first one is advanced process technology.The second one is surface mount (IRFZ48NS) .The third one is low-profile through-hole(IRFZ48NL) .The fourth one is 175 operating temperature.The fifth one is fast sw...
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ48NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ48NS desig...