IRFZ48ZPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 61 A


Features:

􀁏· Advanced Process Technology
􀁏· Ultra Low On-Resistance
􀁏· Dynamic dv/dt Rating
􀁏· 175°C Operating Temperature
􀁏· Fast Switching
􀁏· Repetitive Avalanche Allowed up to Tjmax
􀁏· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V(Silicon Limited)	61	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V(See Fig. 9)	43
IDM	Pulsed Drain Current	240
PD @ TC = 25	Max. Power Dissipation	91		W
	Linear Derating Factor	0.61	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	73	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	120
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ, TSTG	Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ48ZPbF features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFZ48ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	61A
Rds On (Max) @ Id, Vgs	11 mOhm @ 37A, 10V
Input Capacitance (Ciss) @ Vds	1720pF @ 25V
Power - Max	91W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	64nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFZ48ZPBF IRFZ48ZPBF