IRFZ48ZPBF

MOSFET MOSFT 55V 61A 11mOhm 43nC Qg

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SeekIC No. : 00147395 Detail

IRFZ48ZPBF: MOSFET MOSFT 55V 61A 11mOhm 43nC Qg

floor Price/Ceiling Price

US $ .7~1.58 / Piece | Get Latest Price
Part Number:
IRFZ48ZPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.58
  • $1.02
  • $.74
  • $.7
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 61 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 61 A


Features:

􀁏· Advanced Process Technology
􀁏· Ultra Low On-Resistance
􀁏· Dynamic dv/dt Rating
􀁏· 175°C Operating Temperature
􀁏· Fast Switching
􀁏· Repetitive Avalanche Allowed up to Tjmax
􀁏· Lead-Free



Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V(Silicon Limited) 61 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V(See Fig. 9) 43
IDM Pulsed Drain Current 240
PD @ TC = 25 Max. Power Dissipation 91 W
  Linear Derating Factor 0.61 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 73 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 120
IAR Avalanche Current See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy mJ
TJ, TSTG Junction and Storage Temperature Range -55 to 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)  



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFZ48ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFZ48ZPbF features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRFZ48ZPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C61A
Rds On (Max) @ Id, Vgs11 mOhm @ 37A, 10V
Input Capacitance (Ciss) @ Vds 1720pF @ 25V
Power - Max91W
PackagingBulk
Gate Charge (Qg) @ Vgs64nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFZ48ZPBF
IRFZ48ZPBF



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