IRG4BC15UD-L

DIODE IGBT 600V 14A TO-262

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SeekIC No. : 003434266 Detail

IRG4BC15UD-L: DIODE IGBT 600V 14A TO-262

floor Price/Ceiling Price

Part Number:
IRG4BC15UD-L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
IGBT Type: - Frequency : 0.5 GHz to 2 GHz
Voltage - Collector Emitter Breakdown (Max): 600V Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Current - Collector (Ic) (Max): 14A Power - Max: 49W
Input Type: Standard Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

Series: -
Manufacturer: International Rectifier
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Input Type: Standard
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Power - Max: 49W


Features:

• UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching
• IGBT Co-packaged with ultra-soft-recovery antiparallel diode
• Industry standard D2Pak & TO-262 packages





Specifications

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25 Continuous Collector Current 14 A
IC @ TC = 100 Continuous Collector Current 7.8
ICM Pulsed Collector Current 42
ILM Clamped Inductive Load Current 42
IF @ TC = 100 Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25 Maximum Power Dissipation 49 W
PD @ TC = 100 Maximum Power Dissipation 19
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +150
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)





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