IRG4BC15UDPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.95 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB
Continuous Collector Current at 25 C : 11 A
Power Dissipation : 49 W


Features:

• UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching
• IGBT Co-packaged with ultra-soft-recovery antiparallel diode
• Industry standard TO-220AB package
• Lead-Free

 

Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25	Continuous Drain Current VGS @ 10V	3	A
IC @ TC =100	Continuous Drain Current VGS @ 10V	2.5
ICM	Pulsed Drain Current	25
ILM	Clamped Inductive Load Current 	42
IF @ TC = 100	Max. Power Dissipation	2.4
IFM	Diode Maximum Forward Current	16
VGE	Gate-to-Emitter Voltage	±20	V
PD @ TC = 25	Maximum Power Dissipation	49	W
PD @ TC = 100	Maximum Power Dissipation	19
TJ	Operating Junction	-55 to 170
TSTG	Storage Temperature Range

Parameters:

Technical/Catalog Information	IRG4BC15UDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 7.8A
Power - Max	49W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC15UDPBF IRG4BC15UDPBF