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Part Number: IRG4BC20UD-SPbF

 

 

 

 

 

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IRG4BC20UD-SPbF Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
ID @ TC = 25°C Continuous Drain Current 13 A
ID @ TC =100°C Continuous Drain Current 6.5 A
ICM Pulsed Collector Current 52 A
ILM Clamped Inductive Load Current 52 A
IF @ TC = 100°C Diode Continuous Forward Current 7.0 A
IFM Diode Maximum Forward Current 52 V
VGE Gate-to-Emitter Voltage ± 20 A
PD @ TC = 25 Maximum Power Dissipation 60 W
PD @ TC = 100 Maximum Power Dissipation

24

 W
TJ Operating Junction and -55 to +150 W/
TSTG Storage Temperature Range  
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

IRG4BC20UD-SPbF Features

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard D2Pak package
• Lead-Free

IRG4BC20UD-SPbF datasheet

IRG4BAC50S
PDF/DataSheet Download

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