Purchase IRG4BC20UD, In-stock IRG4BC20UD From SeekIC.
MFG:IR
- Table of contents:
IRG4BC20UD
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Suppliers
DataSheet
General Description
IRG4BC20UD Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25 | Continuous Collector Current | 13 | A |
| IC @ TC = 100 | Continuous Collector Current | 6.5 | |
| ICM | Pulsed Collector Current | 52 | |
| ILM | Clamped Inductive Load Current | 52 | |
| IF @ TC = 100 | Diode Continuous Forward Current | 7.0 | |
| IFM | Diode Maximum Forward Current | 52 | |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| PD @ TC = 25 | Maximum Power Dissipation | 60 | W |
| PD @ TC = 100 | Maximum Power Dissipation | 24 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRG4BC20UD Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package
IRG4BC20UD
PDF/DataSheet Download
- Datasheet: IRG4BC20UD
- File Size: 242593 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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- INSULATED GATE BIPOLAR TRANSISTOR
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- ·IRG4BC10K
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- 215624 KB
- ·IRG4BC10S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
- 160816 KB
- ·IRG4BC10SD
- INSULATED GATE BIPOLAR TRANSISTOR
- 215797 KB
- ·IRG4BC10SD-L
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
IRG4BC20UD Relative Products
IRG4BC20U
IGBT UFAST 600V 13A TO-220AB
-
IRG4BC20SPBF
IGBT N-CHAN 600V 19A TO220AB
IRG4BC20SD-SPBF
IGBT N-CH W/DIODE 600V 19A D2PAK
-
IRG4BC20SD-S
IGBT W/DIODE 600V 19A D2PAK
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IRG4BC20SDPBF
IGBT N-CH W/DIO 600V 19A TO220AB
IRG4BC20SD
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