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MFG:International Rectifier Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: International Rectifier

Descriptions: IGBT N-CH W/DIO 600V 13A TO220AB

Price Break

1
10
100
250
500
1000
2500
10000

Unit Price

3.15000
2.15600
1.71470
1.60652
1.53720
1.47735
1.40700
1.31250

Extended Price

3.15
21.56
171.47
401.63
768.60
1477.35
3517.50
13125.00

(All prices are in USD) Prices for reference only

IGBT N-CH W/DIO 600V 13A TO220AB

Technical/Catalog Information	IRG4BC20UDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	13A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 6.5A
Power - Max	60W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC20UDPBF IRG4BC20UDPBF

IRG4BAC50S
PDF/DataSheet Download

·IRG4BAC50U
INSULATED GATE BIPOLAR TRANSISTOR
186056 KB
·IRG4BAC50W
INSULATED GATE BIPOLAR TRANSISTOR
167129 KB
·IRG4BC10K
IRF [International Rectifier]
Short Circuit Rated UltraFast IGBT
162414 KB
·IRG4BC10KD
IRF [International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
215624 KB
·IRG4BC10S
IRF [International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
160816 KB
·IRG4BC10SD
INSULATED GATE BIPOLAR TRANSISTOR
215797 KB
·IRG4BC10SD-L
IRF [International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
222517 KB
·IRG4BC10SD-S
IRF [International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
222517 KB

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