IRG4BC20W-SPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.6 V
Continuous Collector Current at 25 C : 13 A
Package / Case : D2PAK
Power Dissipation : 60 W


Features:

• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Breakdown Voltage	600	V
IC @ TC = 25	Continuous Collector Current	13	A
IC @ TC = 100	Continuous Collector Current	6.5
ICM	Pulsed Collector Current	52
ILM	Clamped Inductive Load Current	52
VGE	Gate-to-Emitter Voltage	± 20	V
EARV	Reverse Voltage Avalanche Energy	200	mJ
PD @ TC = 25	Maximum Power Dissipation	60	W
PD @ TC = 100	Maximum Power Dissipation	24
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case )

Parameters:

Technical/Catalog Information	IRG4BC20W-SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	13A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 6.5A
Power - Max	60W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC20W SPBF IRG4BC20WSPBF