Purchase IRG4BC20W-SPbF, In-stock IRG4BC20W-SPbF From SeekIC.
- Table of contents:
IRG4BC20W-SPbF
-
Suppliers
DataSheet
General Description
IRG4BC20W-SPbF Maximum Ratings
|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Breakdown Voltage |
600 |
V |
|
IC @ TC = 25 |
Continuous Collector Current |
13 |
A |
|
IC @ TC = 100 |
Continuous Collector Current |
6.5 | |
|
ICM |
Pulsed Collector Current |
52 | |
|
ILM |
Clamped Inductive Load Current |
52 | |
|
VGE |
Gate-to-Emitter Voltage |
± 20 |
V |
|
EARV |
Reverse Voltage Avalanche Energy |
200 |
mJ |
|
PD @ TC = 25 |
Maximum Power Dissipation |
60 |
W |
|
PD @ TC = 100 |
Maximum Power Dissipation |
24 | |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
| Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm) from case ) |
IRG4BC20W-SPbF Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
• Lead-Free
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
• Lead-Free
IRG4BAC50S
PDF/DataSheet Download
- Datasheet: IRG4BAC50S
- File Size: 138592 KB
- Manufacturer:
- Click here to Download
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- INSULATED GATE BIPOLAR TRANSISTOR
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- ·IRG4BAC50W
- INSULATED GATE BIPOLAR TRANSISTOR
- 167129 KB
- ·IRG4BC10K
- IRF [International Rectifier]
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- ·IRG4BC10KD
- IRF [International Rectifier]
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- 215624 KB
- ·IRG4BC10S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
- 160816 KB
- ·IRG4BC10SD
- INSULATED GATE BIPOLAR TRANSISTOR
- 215797 KB
- ·IRG4BC10SD-L
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
- ·IRG4BC10SD-S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
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