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MFG:IR  Package Cooled:04+  D/C:220  

IRG4BC30FD Product Image

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Part Number: IRG4BC30FD

 

MFG: IR

Package Cooled: 04+

D/C: 220

 

Urgent Purchase

IRG4BC30FD Maximum Ratings

 

                

                              Parameter

                 

  Max. Units
         VCES


Collector-to-Emitter Voltage            600 V
IC @ TC = 25°C Continuous Collector Current            31 A
IC @ TC = 100°C Continuous Collector Current            17

           ICM
Pulsed Collector Current            120
           ILM Clamped Inductive Load Current ‚            120
IF @ TC = 100°C



Diode Continuous Forward Current            12
             IFM Diode Maximum Forward Current           120
             VGE Gate-to-Emitter Voltage          ± 20 V
PD @ TC = 25°C Maximum Power Dissipation            100 W
PD @ TC = 100°C
Maximum Power Dissipation
            42
               TJ
             TSTG

Operating Junction and Storage Temperature Range

-55 to +150 °C
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)  

IRG4BC30FD Features

• Fast: Optimized for medium operating
   frequencies ( 1-5 kHz in hard switching, >20
   kHz in resonant mode).
• Generation 4 IGBT design provides tighter
  parameter distribution and higher efficiency than
  Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
  ultra-soft-recovery anti-parallel diodes for use in
  bridge configurations
• Industry standard TO-220AB package Benefits

IRG4BC30FD datasheet

IRG4BC30FD
PDF/DataSheet Download

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