Position: Home > Datasheet list > IRG Series > Index I > IRG4BC30FD1
Electronica China

Purchase IRG4BC30FD1, In-stock IRG4BC30FD1 From SeekIC.

 

IRG4BC30FD1 Product Image

IRG Series Datasheet download

Five Points

Part Number: IRG4BC30FD1

 

 

 

 

Description: IRG4BC30FD1 is an excellent product with four unique features : The fir...


Urgent Purchase

IRG4BC30FD1 General Description


      IRG4BC30FD1 is an excellent product with four unique features : The first one is fast becuase that it is optimized for medium operating frequencies(1-5 kHz in hard switching , faster than 20 kHz in resonant mode). The second one is generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The third one is IGBT co-packaged with hyperfast FRED diodes for ultra low recovery characteristics. The forth one is industry standard TO-220AB package. Otherwise , it also has three benefits. The frist one is generation 4 IGBT's offer highest efficiency available. The second one is IGBT's optimized for specific application conditions. The third one is FRED diodes optimized for performance with IGBT's and minimized recovery chacteristics require less/no snubbing.
     The, there are some absolute maximum ratings about it. Collector-to-Emitter Voltage (VCES) is 600 V max. Continuous Collector Current(IC @ TC = 25°C) is 31 A.Continuous Collector Current(IC @ TC = 100°C) is 17 A. Pulse Collector Current (ICM ) is 120 A. Clamped Inductive Load current(ILM ) is 120 A. Diode Continuous Forward Current(IF @ TC = 100°C) is 8 A. Diode Maximum Forward Current(IFM ) is 16 A. Gate-to-Emitter Voltage(VGE ) is ±20 V. Maximum Power Dissipation(PD @ TC = 25°C ) is 100 W.Maximum Power Dissipation(PD @ TC = 100°C) is 42 W. Operating Junction and Storage Temperature Range(TJ,TSTG) is from -55°C to +150°C.
      At last, there are some thermal and mechanical characteristics about it.Junction-to-Case- IGBT (RJC ) is 1.2 °C/W.
Junction-to-Case- Diode(RJC) is 2.0 °C/W. Case-to-Sink, flat, greased surface(RCS ) is 0.50°C/W . Junction-to-Ambient, typical socket mount (RJA ) is 80°C/W. Weight(Wt) is 2.0g (0.07oz.).
     In a word , this is just a simple introduction of this kind of product, and if you are interestd in it or you want to know detailed information about it, please come to know more about our web  for that you will get more imformation about it . Thanks for your attention to our web and our information!


 



IRG4BC30FD1 Maximum Ratings



IRG4BC30FD1 Features



IRG4BC30FD1 datasheet

IRG4BAC50S
PDF/DataSheet Download

Find IRG4BC30FD1 Suppliers

  • ·IRG4BAC50U
  •  
  • INSULATED GATE BIPOLAR TRANSISTOR 
  • 186056 KB
  • IRG4BAC50U Datasheet Download
  • ·IRG4BAC50W
  •  
  • INSULATED GATE BIPOLAR TRANSISTOR 
  • 167129 KB
  • IRG4BAC50W Datasheet Download
  • ·IRG4BC10K
  • IRF [International Rectifier] 
  • Short Circuit Rated UltraFast IGBT 
  • 162414 KB
  • IRG4BC10K Datasheet Download
  • ·IRG4BC10KD
  • IRF [International Rectifier] 
  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A) 
  • 215624 KB
  • IRG4BC10KD Datasheet Download
  • ·IRG4BC10S
  • IRF [International Rectifier] 
  • INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 
  • 160816 KB
  • IRG4BC10S Datasheet Download
  • ·IRG4BC10SD
  •  
  • INSULATED GATE BIPOLAR TRANSISTOR 
  • 215797 KB
  • IRG4BC10SD Datasheet Download
  • ·IRG4BC10SD-L
  • IRF [International Rectifier] 
  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 
  • 222517 KB
  • IRG4BC10SD-L Datasheet Download
  • ·IRG4BC10SD-S
  • IRF [International Rectifier] 
  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 
  • 222517 KB
  • IRG4BC10SD-S Datasheet Download

Related Part Number

    IRG4BC30FD1 Relative Products

    Hotspot Suppliers Product

    • Models: ML2871GDZEAD
Price: 0.1-10 USD

      ML2871GDZEAD

      Price: 0.1-10 USD

      ML2871GDZEAD, OKI, QFN32, Integrated Circuits

    • Models: CL21A475KPFNNNE
Price: 0.01-0.02 USD

      CL21A475KPFNNNE

      Price: 0.01-0.02 USD

      Multilayer Ceramic Capacitor, SMD, Wide Capacitance

    • Models: AD625AD
Price: 1-2 USD

      AD625AD

      Price: 1-2 USD

      precision instrumentation amplifier, 25MHZ, 16CDIP, 25 μV, 450 mW, AD625AD

    • Models: EPM7128STC100-6
Price: 10-20 USD

      EPM7128STC100-6

      Price: 10-20 USD

      7.5ns, Programmable Logic Device, High-performance, EEPROM-based, Configurable expander, QFP

    • Models: BLF278
Price: 1-2 USD

      BLF278

      Price: 1-2 USD

      D-MOS transistor, N-channel enhancement mode, smd, 110 V, 500 W

    • Models: BTA41-600B
Price: 1-1.3 USD

      BTA41-600B

      Price: 1-1.3 USD

      IT(RMS) 40A, TO3P, IGT(Q1) 50mA, standard TRIAC, on-stage current 40A, VDRM 600, VRRM 800V

    • Models: BCW32
Price: 0.01-0.012 USD

      BCW32

      Price: 0.01-0.012 USD

      NPN general purpose transistor, SOT-23, 100 mA, 32 V, BCW32, NXP

    • Models: EP1C3T144C8N
Price: 1-1 USD

      EP1C3T144C8N

      Price: 1-1 USD

      field programmable gate array, TQFP144, –0.5 to 4.6 V

    • Models: MC68HC908GT8CFB
Price: 1.8-2.8 USD

      MC68HC908GT8CFB

      Price: 1.8-2.8 USD

      low-cost, high-performance, 8-bit microcontroller unit, QFP44, –0.3 to + 6.0 V, ± 15 mA, Eight cha...

    • Models: AD9882KST-140
Price: 1-10 USD

      AD9882KST-140

      Price: 1-10 USD

      Dual Interface, QFP, 140 MSPS

    • Models: RB751SL
Price: 0.1-0.15 USD

      RB751SL

      Price: 0.1-0.15 USD

      Schottky Barrier Diode, SOD-923, Low Forward Voltage Drop, Fast switching, 30V

    • Models: OPA345UA
Price: 0.61-0.71 USD

      OPA345UA

      Price: 0.61-0.71 USD

      SOP-8, low power, single-supply, rail-to-rail operational amplifier, 3MHz, 1mV, 0.8V/μs, 4000V

    Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All