IRG4BC30FD1PbF

      The IRG4BC30FD1PbF(Fast CoPack IGBT) possess many features such asa Fast : optimized for medium operating frequencies, ( 1-5 kHz in hard switching , > 20kHz in resonant mode). Generation 4 IGBT design provides tighter pa rameter distribution and higher efficiency than Generation 3,  IGBT co-packagedw with Hyperfast FRED diodes for ultra Iow reCovery Characteristics.(Industry standard TO -220AB paCkage; Lesd-Free).
      The IRG4BC30FD1PbF has many benefits for example Generation 4 IGBT's offer highest efficiency available, IGBT's optimized for specific application conditions, FRED diodes optimized for performancewithIGBT's, Minimized recovery characteristics require less/no snubbing.
      Some parameters of the IRG4BC30FD1PbF in the aspect of maximum ratings are Vces(Collector-to-Emitter Voltage)=600(max)V, Ic @ Tc=25(continuous collector current)=31(max)A, Ic @ Tc=100(continuous collector current)=17(max)A, Icm(Pulse Collector Current (Ref. Fig.C.T.5))=120(max)A, Ilm(Clamped Inductive Load current)=120(max)A, If @ Tc=100(Diode Continuous foewardcurrent)=8(max)A, If(diode maximum foeward Current)=16(max)A, pd @Tc=25(Maximum power dissipation)=100(max)W, pd @Tc=100(Maximum power dissipation)=42(max)W, TJ, Tstg(Operating Junction and Storaqe Temperature Ranqe)= -55 to +150, Storage Temperature Range, for 10 sec. =300(0.063 in.(1.6mm)from case).