IRG4BC30UPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB
Power Dissipation : 100 W
Continuous Collector Current at 25 C : 23 A


Features:

• UltraFast: optimized for high operating frequencies 8-40 kHz
   in hard switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter
   distribution and higher efficiency than Generation 3
• Industry standard TO-220AB package
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Breakdown Voltage	600	V
IC @ TC = 25	Continuous Collector Current	23	A
IC @ TC =100	Continuous Collector Current	12
ICM	Pulsed Collector Current	92
ILM	Clamped Inductive Load Current	92
VGE	Gate-to-Emitter Voltage	± 20	V
EARV	Reverse Voltage Avalanche Energy	10	mJ
PD @ TC =25	Maximum Power Dissipation	100	W
PD @ TC =100	Maximum Power Dissipati	42
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm from case )
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Parameters:

Technical/Catalog Information	IRG4BC30UPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	23A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 12A
Power - Max	100W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC30UPBF IRG4BC30UPBF