IRG4BH20K-SPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1.2 KV
Package / Case : D2PAK
Power Dissipation : 60 W
Collector-Emitter Saturation Voltage : 3.17 V
Continuous Collector Current at 25 C : 11 A


Features:

• High short circuit rating optimized for motor control,tsc =10s @ V_CC = 720V , TJ = 125,VGE = 15V
• Combines low conduction losses with high switching speed
• Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
• Industry standard D2Pak package
• Lead-Free

Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	1200	V
			A
IC @ Tc = 25	Continuous Drain Current	11
IC @ Tc = 100	Continuous Drain Current	5
ICM	Pulsed Drain Current	22
ILM	Clamped Inductive Load Current	22
tsc	Short Circuit Withstand Time	10	s
VGE	Gate-to-Emitter Voltage	±20	V
EARV	ReverseVoltage Avalanche Energy	130	mJ
PD @Tc= 25	C Max. Power Dissipation	60	W
PD @Tc= 100	C Max. Power Dissipation	24	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175

Parameters:

Technical/Catalog Information	IRG4BH20K-SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	11A
Vce(on) (Max) @ Vge, Ic	4.3V @ 15V, 5A
Power - Max	60W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BH20K SPBF IRG4BH20KSPBF