IRG4IBC20FDPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 34 W
Package / Case : TO-220FP
Collector-Emitter Saturation Voltage : 2 V
Continuous Collector Current at 25 C : 14.3 A


Features:

• Very Low 1.66V votage drop
• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• IGBT co-packaged with HEXFREDTM ultrafast,ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 Fullpak^TM outline
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	A
IC @TC = 25°C	Continuous Collector Current	14.3
IC @TC = 100°C	Continuous Collector Current	7.7
ICM	Pulsed Collector Current	64
ILM	Clamped Inductive Load Current	64
IF @TC =100°C	Diode Continuous Forward Current	6.5	V
IFM	Diode Maximum Forward Current	64
Visol	RMS Isolation Voltage, Terminal to Case	2500	W
VGE	Gate-to-Emitter Voltage	±20
PD @TC = 25°C	Maximum Power Dissipation	34
PD @TC =100°C	Maximum Power Dissipation	14
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300(0.063 in.(1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw	10 lbf•in (1.1 N•m)

Parameters:

Technical/Catalog Information	IRG4IBC20FDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14.3A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 9A
Power - Max	34W
Mounting Type	Through Hole
Package / Case	TO-220-3 Fullpak (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4IBC20FDPBF IRG4IBC20FDPBF