Purchase IRG4PC40S, In-stock IRG4PC40S From SeekIC.
MFG:IR Package Cooled:TO-247 D/C:05+
- Table of contents:
IRG4PC40S
-
Suppliers
DataSheet
General Description
IRG4PC40S Maximum Ratings
|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Breakdown Voltage |
600 |
V |
|
IC @ TC = 25 |
Continuous Collector Current |
60 |
A |
|
IC @ TC = 100 |
Continuous Collector Current |
31 | |
|
ICM |
Pulsed Collector Current |
120 | |
|
ILM |
Clamped Inductive Load Current |
120 | |
|
VGE |
Gate-to-Emitter Voltage |
± 20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
15 |
mJ |
|
PD @ TC = 25 |
Maximum Power Dissipation |
160 |
W |
|
PD @ TC = 100 |
Maximum Power Dissipation |
65 | |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
| Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm) from case | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
IRG4PC40S Features
• Standard: Optimized for minimum saturation voltage and low
operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and
higher efficiency than Generation 3
• Industry standard TO-247AC package
operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and
higher efficiency than Generation 3
• Industry standard TO-247AC package
IRG4PC40S
PDF/DataSheet Download
- Datasheet: IRG4PC40S
- File Size: 146441 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRG4BAC50S
- INSULATED GATE BIPOLAR TRANSISTOR
- 138592 KB
- ·IRG4BAC50U
- INSULATED GATE BIPOLAR TRANSISTOR
- 186056 KB
- ·IRG4BAC50W
- INSULATED GATE BIPOLAR TRANSISTOR
- 167129 KB
- ·IRG4BC10K
- IRF [International Rectifier]
- Short Circuit Rated UltraFast IGBT
- 162414 KB
- ·IRG4BC10KD
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
- 215624 KB
- ·IRG4BC10S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
- 160816 KB
- ·IRG4BC10SD
- INSULATED GATE BIPOLAR TRANSISTOR
- 215797 KB
- ·IRG4BC10SD-L
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
IRG4PC40S Relative Products
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IGBT W/DIODE 600V 42A TO247AC
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IRG4PC40KDE206P
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IRG4PC40KD
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IRG4PC40K
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IRG4PC40FPBF
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IRG4PC40FDPbF
IRG4PC40FDPbF is a kind of insulated gate bipolar transistor with ultrafast soft recovery diode. Here you can get some information about the feature ofIRG4PC40FDPbF. First is the ultrfast feature which is optimized for medium operating frequencies (1-5 KHz ...
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