Purchase IRG4PC40SPbF, In-stock IRG4PC40SPbF From SeekIC.
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- Table of contents:
IRG4PC40SPbF
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Suppliers
DataSheet
General Description
IRG4PC40SPbF Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Breakdown Voltage | 600 | V |
| ID @ TC = 25 | Continuous Collector Current | 60 | A |
| ID @ TC = 100 | Continuous Collector Current | 31 | |
| ICM | Pulsed Collector Current | 120 | |
| ILM | Clamped Inductive Load Current | 120 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 15 | mJ |
| PD @ TC = 25 | Maximum Power Dissipation | 160 | W |
| PD @ TC = 25 | Maximum Power Dissipation | 65 | |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Soldering Temperature, for 10 seconds | 300(0.063 in. (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 Screw | 10 lbf•in (1.1N•m) |
Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10,(See fig. 13a)
Repetitive rating; pulse width limited by maximum junction temperature.
IRG4PC40SPbF Features
• Standard: Optimized for minimum saturationvoltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-247AC package
• Lead-Free
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• Industry standard TO-247AC package
• Lead-Free
IRG4BAC50S
PDF/DataSheet Download
- Datasheet: IRG4BAC50S
- File Size: 138592 KB
- Manufacturer:
- Click here to Download
- ·IRG4BAC50U
- INSULATED GATE BIPOLAR TRANSISTOR
- 186056 KB
- ·IRG4BAC50W
- INSULATED GATE BIPOLAR TRANSISTOR
- 167129 KB
- ·IRG4BC10K
- IRF [International Rectifier]
- Short Circuit Rated UltraFast IGBT
- 162414 KB
- ·IRG4BC10KD
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
- 215624 KB
- ·IRG4BC10S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
- 160816 KB
- ·IRG4BC10SD
- INSULATED GATE BIPOLAR TRANSISTOR
- 215797 KB
- ·IRG4BC10SD-L
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
- ·IRG4BC10SD-S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
IRG4PC40SPbF Relative Products
IRG4PC40S
IGBT STD 600V 60A TO-247AC
-
IRG4PC40KDPBF
IGBT W/DIODE 600V 42A TO247AC
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IRG4PC40KDE206P
IGBT UFAST 600V 42A TO-247AC
-
IRG4PC40KD
IGBT W/DIODE 600V 42A TO-247AC
-
IRG4PC40K
IGBT UFAST 600V 42A TO-247AC
-
IRG4PC40FPBF
IGBT FAST 600V 49A TO247AC
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