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IRG4PC60F

Features: • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.• Industry standard TO-247AC package.Specifications Parameter ...

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SeekIC No. : 004377718 Detail

IRG4PC60F: Features: • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).• Generation 4 IGBT design provides tighter parameter distribution ...

IRG4PC60F Data Sheet

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Part Number:
IRG4PC60F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
• Industry standard TO-247AC package.




Specifications

Parameter
Max.
Units
VCES Collector-to-Emitter Breakdown Voltage
600
V
ID @ TC = 25°C Continuous Drain Current
90
A
ID @ TC = 100°C Continuous Drain Current
60
ICM Pulsed Drain Current
120
ILM Clamped Inductive Load Current
120
VGE Gate-to-Emitter Voltage
± 20
V
EARV Reverse Voltage Avalanche Energy
200
mJ
PD @TC = 25°C Max. Power Dissipation
520
W
PD @ TC = 100°C Maximum Power Dissipation
210
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (0.063 in (1.6mm) from case for 10 sec)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)





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