IRG4PC60UPBF

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Continuous Collector Current at 25 C : 75 A
Power Dissipation : 520 W


Features:

·UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200kHz in resonant mode.
·Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
·Industry standard TO-247AC package.
·Lead-Free

Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Breakdown Voltage	600	V
IC @ TC = 25 IC @ TC = 100 ILM ICM	Continuous Drain Current Continuous Drain Current Pulsed Drain Current Clamped Inductive Load Current	75 40 300 300	A
PD @ TC = 25 PD @ TC = 25	Maximum Power Dissipation Maximum Power Dissipation	200 520	W
EARV	Reverse Voltage Avalanche Energy	200	mJ
VGE	Gate-to-Source Voltage	± 20	V
	Mounting torque ,6-32 or M3 srcrew	10 lbf`in(1.1N`M)	V/ns
	Soldering Temperature, for 10 seconds	300(0.063 in (1.6mm from case )
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150

Parameters:

Technical/Catalog Information	IRG4PC60UPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	75A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 40A
Power - Max	520W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4PC60UPBF IRG4PC60UPBF