IRG4PH50S-EPBF

IGBT Transistors 1200V DC-1kHz w/ exetended lead

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IRG4PH50S-EPBF: IGBT Transistors 1200V DC-1kHz w/ exetended lead

floor Price/Ceiling Price

US $ 2.57~4.62 / Piece | Get Latest Price
Part Number:
IRG4PH50S-EPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $4.62
  • $3.38
  • $2.68
  • $2.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/6

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1.2 KV
Collector-Emitter Saturation Voltage : 1.7 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 57 A Power Dissipation : 200 W
Package / Case : TO-247AD Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247AD
Collector-Emitter Saturation Voltage : 1.7 V
Collector- Emitter Voltage VCEO Max : 1.2 KV
Power Dissipation : 200 W
Continuous Collector Current at 25 C : 57 A


Parameters:

Technical/Catalog InformationIRG4PH50S-EPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)57A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 33A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247AD
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRG4PH50S EPBF
IRG4PH50SEPBF



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