IRG4PSH71UDPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1.2 KV
Collector-Emitter Saturation Voltage : 2.7 V
Power Dissipation : 350 W
Package / Case : TO-274AA
Continuous Collector Current at 25 C : 99 A


Features:

• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
• Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247
• Creepage distance increased to 5.35mm
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	1200	V
IC @ TC = 25°C	Continuous Collector Current	99	A
IC @ TC = 100°C	Continuous Collector Current	50
ICM	Pulse Collector Current	200
ILM	Clamped Inductive Load current	200
VGE	Gate-to-Emitter Voltage	±20	V
IF @ Tc = 100°C	Diode Continuous Forward Current	70	W
IFM	Diode Maximum Forward Current	200
PD @ TC = 25°C	Maximum Power Dissipation	350
PD @ TC = 100°C	Maximum Power Dissipation	140
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150	°C
	Storage Temperature Range, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRG4PSH71UDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	*
Vce(on) (Max) @ Vge, Ic	*
Power - Max	350W
Mounting Type	Through Hole
Package / Case	Super-247-3 (Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4PSH71UDPBF IRG4PSH71UDPBF