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IRG4RC10S

Features: • Extremely low voltage drop; 1.0V typical at 2A, 100• Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation• I...

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SeekIC No. : 004377737 Detail

IRG4RC10S: Features: • Extremely low voltage drop; 1.0V typical at 2A, 100• Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)• Generation 4 IGBT de...

IRG4RC10S Data Sheet

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Part Number:
IRG4RC10S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Extremely low voltage drop; 1.0V typical at 2A, 100
• Standard: Optimized for minimum saturation voltage and low
operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and
higher efficiency than previous generation
• Industry standard TO-252AA package




Specifications
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25
Continuous Collector Current
14
A
IC @ TC = 100
Continuous Collector Current
8.0
ICM
Pulsed Collector Current
18
ILM
Clamped Inductive Load Current
18
VGE
Gate-to-Emitter Voltage
±20
V
EARV Reverse Voltage Avalanche Energy
110
mJ
PD @ TC = 25
Maximum Power Dissipation
38
PD @ TC = 100
 Maximum Power Dissipation
15
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case )





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