Purchase IRG4RC10U, In-stock IRG4RC10U From SeekIC.
MFG:IR Package Cooled:06+ D/C:D-Pak
- Table of contents:
IRG4RC10U
-
Suppliers
DataSheet
General Description
IRG4RC10U Maximum Ratings
|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Voltage |
600 |
V |
|
IC @ TC = 25 |
Continuous Collector Current |
8.5 |
A |
|
IC @ TC = 100 |
Continuous Collector Current |
5.0 | |
|
ICM |
Pulsed Collector Current |
34 | |
|
ILM |
Clamped Inductive Load Current |
34 | |
|
VGE |
Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
110 |
mJ |
|
PD @ TC = 25 |
Maximum Power Dissipation |
38 |
W |
|
PD @ TC = 100 |
Maximum Power Dissipation |
15 | |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
| Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm) from case ) |
IRG4RC10U Features
• UltraFast: Optimized for high operating frequencies ( 8-40 kHz in
hard switching, >200 kHz in resonant mode)
• Generation 4 IGBT design provides tighter parameter distribution and
higher efficiency than previous generation
• Industry standard TO-252AA package
hard switching, >200 kHz in resonant mode)
• Generation 4 IGBT design provides tighter parameter distribution and
higher efficiency than previous generation
• Industry standard TO-252AA package
IRG4RC10U
PDF/DataSheet Download
- Datasheet: IRG4RC10U
- File Size: 134470 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRG4BAC50S
- INSULATED GATE BIPOLAR TRANSISTOR
- 138592 KB
- ·IRG4BAC50U
- INSULATED GATE BIPOLAR TRANSISTOR
- 186056 KB
- ·IRG4BAC50W
- INSULATED GATE BIPOLAR TRANSISTOR
- 167129 KB
- ·IRG4BC10K
- IRF [International Rectifier]
- Short Circuit Rated UltraFast IGBT
- 162414 KB
- ·IRG4BC10KD
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
- 215624 KB
- ·IRG4BC10S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
- 160816 KB
- ·IRG4BC10SD
- INSULATED GATE BIPOLAR TRANSISTOR
- 215797 KB
- ·IRG4BC10SD-L
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
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