IRG4ZC70UD Selling Leads, Price trend, IRG4ZC70UD DataSheet download, circuit diagram from SeekIC.com

Features: UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low gate chargeLow profile low inductance SMD-10 packageSeparated control & Power-connections for easy para...

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SeekIC No. : 004377740 Detail

IRG4ZC70UD: Features: UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low gate ch...

IRG4ZC70UD Data Sheet

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Part Number:: IRG4ZC70UD
Supply Ability:: 5000

Price Break

Qty
1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/4/27

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Recent History
What is this?

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Product Details

Description

Features:

UltraFast IGBT optimized for high switching frequencies
IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations
Low gate charge
Low profile low inductance SMD-10 package
Separated control & Power-connections for easy paralleling
Inherently coplanar pins and tab
Easy solder inspection and cleaning

Specifications

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	600	V
I_D @ T_C = 25°C	Continuous Drain Current	100	A
I_D @ T_C = 100°C	Continuous Drain Current	50
I_CM	Pulsed Drain Current	400
I_LM	Clamped Inductive Load Current	400
I_F@ T_C = 100°C	Diode Continuous Forward Current	50
I_FM	Diode Maximum Forward Current	400
V_GE	Gate-to-Emitter Voltage	± 20	V
P_D @T_C = 25°C	Max. Power Dissipation	350	W
PD @ TC = 100°C	Maximum Power Dissipation	140	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C

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IRG4ZC70UD

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