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IRG4ZC71KD

Features: • High short circuit rating optimized for motor control, tsc =10s, VCC = 360V , TJ = 125°C,VGE = 15V• IGBT co-packaged with HEXFREDä ultrafast,ultra-soft-recovery antiparallel diodes for use in bridge configurations• Combines low conduction losses with high switchi...

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SeekIC No. : 004377741 Detail

IRG4ZC71KD: Features: • High short circuit rating optimized for motor control, tsc =10s, VCC = 360V , TJ = 125°C,VGE = 15V• IGBT co-packaged with HEXFREDä ultrafast,ultra-soft-recovery antipara...

IRG4ZC71KD Data Sheet

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Part Number:
IRG4ZC71KD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• High short circuit rating optimized for motor control, tsc =10s, VCC = 360V , TJ = 125°C,VGE = 15V
• IGBT co-packaged with HEXFREDä ultrafast,ultra-soft-recovery antiparallel diodes for use in bridge configurations
• Combines low conduction losses with high switching speed
• Low profile low inductance SMD-10 Package
• Separated control & Power-connections for easy paralleling
• Good coplanarity
• Easy solder inspection and clea


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
100
A
IC @ TC = 100°C Continuous Collector Current
60
ICM Pulsed Collector Current
200
ILM Clamped Inductive Load Current
200
IF @ TC = 100°C Diode Continuous Forward Current
50
IFM Diode Maximum Forward Current
200
tsc Short Circuit Withstand Time
10
s
VGE Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C Maximum Power Dissipation
350
W
PD @ TC = 100°C Maximum Power Dissipation
140
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case - IGBT
-
0.36
°C/W
RJC Junction-to-Case - Diode
-
0.69
RCS SMD-10 Case-to-Heatsink (typical), *
0.44
-
Wt Weight
6.0 (0.21)
-
g(oz)



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