Purchase IRG4ZH70UD, In-stock IRG4ZH70UD From SeekIC.
- Table of contents:
IRG4ZH70UD
-
Suppliers
DataSheet
General Description
IRG4ZH70UD Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Breakdown Voltage |
1200 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
78 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
42 | |
| ICM | Pulsed Collector Current |
312 | |
| ILM | Clamped Inductive Load Current |
312 | |
| IF @ TC = 100°C | Diode Continuous Forward Current |
42 | |
| IFM | Diode Maximum Forward Current |
312 | |
| VGE | Gate-to-Emitter Voltage |
± 20 |
V |
| PD @ TC = 25°C | Maximum Power Dissipation |
350 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
140 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
|
Parameter |
Typ. |
Max. |
Units | |
| RJC | Junction-to-Case - IGBT |
- |
0.36 |
°C/W |
| RJC | Junction-to-Case - Diode |
- |
0.69 | |
| RCS | SMD-10 Case-to-Heatsink (typical), * |
0.44 |
- | |
| Wt | Weight |
6.0 (0.21) |
- |
g(oz) |
IRG4ZH70UD Features
·UltraFast IGBT optimized for high switching frequencies
·IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft recovery antiparallel diodes for use in bridge configurations
·Low Gate Charge
·Low profile low inductance SMD-10 Package
·Separated control & Power-connections for easy paralleling
·Inherently good coplanarity
·Easy solder inspection and cleaning
·IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft recovery antiparallel diodes for use in bridge configurations
·Low Gate Charge
·Low profile low inductance SMD-10 Package
·Separated control & Power-connections for easy paralleling
·Inherently good coplanarity
·Easy solder inspection and cleaning
IRG4ZH70UD
PDF/DataSheet Download
- Datasheet: IRG4ZH70UD
- File Size: 238831 KB
- Manufacturer:
- Click here to Download
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