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IRG4ZH70UD

Features: ·UltraFast IGBT optimized for high switching frequencies·IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft recovery antiparallel diodes for use in bridge configurations·Low Gate Charge·Low profile low inductance SMD-10 Package·Separated control & Power-connections for easy paralle...

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SeekIC No. : 004377743 Detail

IRG4ZH70UD: Features: ·UltraFast IGBT optimized for high switching frequencies·IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft recovery antiparallel diodes for use in bridge configurations·Low Gate Charge·...

IRG4ZH70UD Data Sheet

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Part Number:
IRG4ZH70UD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·UltraFast IGBT optimized for high switching frequencies
·IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft recovery antiparallel diodes for use in bridge configurations
·Low Gate Charge
·Low profile low inductance SMD-10 Package
·Separated control & Power-connections for easy paralleling
·Inherently good coplanarity
·Easy solder inspection and cleaning


Specifications

 
Parameter
Max.
Units
VCES Collector-to-Emitter Breakdown Voltage
1200
V
IC @ TC = 25°C Continuous Collector Current
78
A
IC @ TC = 100°C Continuous Collector Current
42
ICM Pulsed Collector Current
312
ILM Clamped Inductive Load Current
312
IF @ TC = 100°C Diode Continuous Forward Current
42
IFM Diode Maximum Forward Current
312
VGE Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C Maximum Power Dissipation
350
W
PD @ TC = 100°C Maximum Power Dissipation
140
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case - IGBT
-
0.36
°C/W
RJC Junction-to-Case - Diode
-
0.69
RCS SMD-10 Case-to-Heatsink (typical), *
0.44
-
Wt Weight
6.0 (0.21)
-
g(oz)
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink


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