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MFG:IR  Package Cooled:TO-220  D/C:05+  

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Part Number: IRGB420U

 

MFG: IR

Package Cooled: TO-220

D/C: 05+

Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...


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IRGB420U General Description


Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

IRGB420U Maximum Ratings

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
500
V
IC @ TC = 25°C Continuous Collector Current
14
A
IC @ TC = 100°C Continuous Collector Current
7.5
ICM Pulsed Collector Current
28
ILM Clamped Inductive Load Current
28
VGE Gate-to-Emitter Voltage
± 20
V
EARV Reverse Voltage Avalanche Energy
5.0
mJ
PD @ TC = 25°C Maximum Power Dissipation
60
W
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf`in (1.1N`m)
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
2.1
°C/W
RCS Case-to-Sink, flat, greased surface
0.50
-
RJA Junction-to-Ambient, typical socket mount
-
80
Wt Weight
2.0 (0.07)
-
g(oz)

IRGB420U Features

• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

IRGB420U datasheet

IRGB420U
PDF/DataSheet Download

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