IGBT Transistors 600V Low-Vceon Non Punch Through
IRGB4B60KD1PBF: IGBT Transistors 600V Low-Vceon Non Punch Through
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Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2.5 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 12 A | Power Dissipation : | 63 W | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Symbol | Parameter | Max. | Unit |
| VCES | Collector-emitter voltage | 600 | V |
| IC @ TC = 25 | Continuous Collector Current | 11 | A |
| IC @ TC = 100 | Continuous Collector Current | 7.6 | |
| ICM | Pulse Collector Current (Ref.Fig.C.T.5) | 22 | |
| ILM | Clamped Inductive Load current | 22 | |
| IF @ TC = 25 | Diode Continuous Forward Current | 11 | |
| IF @ TC = 100 | Diode Continuous Forward Current | 6.7 | |
| IFM | Diode Maximum Forward Current | 22 | |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| PD @ TC = 25 | Maximum Power Dissipation | 63 | W |
| PD @ TC = 100 | Maximum Power Dissipation | 31 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +175 | |
| Storage Temperature Range, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |
| Technical/Catalog Information | IRGB4B60KD1PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 11A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
| Power - Max | 63W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGB4B60KD1PBF IRGB4B60KD1PBF |