Purchase IRGB4B60KD1PbF, In-stock IRGB4B60KD1PbF From SeekIC.
- Table of contents:
IRGB4B60KD1PbF
-
Suppliers
DataSheet
General Description
IRGB4B60KD1PbF Maximum Ratings
| Symbol | Parameter | Max. | Unit |
| VCES | Collector-emitter voltage | 600 | V |
| IC @ TC = 25 | Continuous Collector Current | 11 | A |
| IC @ TC = 100 | Continuous Collector Current | 7.6 | |
| ICM | Pulse Collector Current (Ref.Fig.C.T.5) | 22 | |
| ILM | Clamped Inductive Load current | 22 | |
| IF @ TC = 25 | Diode Continuous Forward Current | 11 | |
| IF @ TC = 100 | Diode Continuous Forward Current | 6.7 | |
| IFM | Diode Maximum Forward Current | 22 | |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| PD @ TC = 25 | Maximum Power Dissipation | 63 | W |
| PD @ TC = 100 | Maximum Power Dissipation | 31 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +175 | |
| Storage Temperature Range, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |
IRGB4B60KD1PbF Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10s Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175.
• TO-220 is available in PbF as Lead-Free
• 10s Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175.
• TO-220 is available in PbF as Lead-Free
IRGB4B60KD1PbF Typical Application
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
IRG4BAC50S
PDF/DataSheet Download
- Datasheet: IRG4BAC50S
- File Size: 138592 KB
- Manufacturer:
- Click here to Download
- ·IRG4BAC50U
- INSULATED GATE BIPOLAR TRANSISTOR
- 186056 KB
- ·IRG4BAC50W
- INSULATED GATE BIPOLAR TRANSISTOR
- 167129 KB
- ·IRG4BC10K
- IRF [International Rectifier]
- Short Circuit Rated UltraFast IGBT
- 162414 KB
- ·IRG4BC10KD
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
- 215624 KB
- ·IRG4BC10S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
- 160816 KB
- ·IRG4BC10SD
- INSULATED GATE BIPOLAR TRANSISTOR
- 215797 KB
- ·IRG4BC10SD-L
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
- ·IRG4BC10SD-S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
IRGB4B60KD1PbF Relative Products
IRGB4B60KD1
IRGB4B60K
The IRGB4B60K has 5 features.The first one is Low VCE (on) Non Punch Through IGBT Technology.The second one is 10s Short Circuit Capability.The third one is Square RBSOA.The fourth one is Positive VCE (on) Temperature Coefficient.The fifth one is Maximum Ju...
IRGB430UD2
Co-packaged IGBTs IRGB430UD2 are a natural extension of International Rectifier's well known IGBT line. The IRGB430UD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-volt...
IRGB430U
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGB430U have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGB430...
IRGB420UD2
Co-packaged IGBTs IRGB420UD2 are a natural extension of International Rectifier's well known IGBT line. The IRGB420UD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-volt...
IRGB420U
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGB420Uhave higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGB420U...
Hotspot Suppliers Product
LPC2119FBD64
Price: 6-6.1 USD
IC ARM7 MCU FLASH 128K 64-LQFP - LPC2119FBD64
BCM5248UA4KQM
Price: 5.9-6.2 USD
24-port fast ethernet, 2-port gigabit, ethernet multilayer switch, QFP128
LRMS-TUX
Price: 1-8 USD
RF Power 50mW, SOP-6, IF Current 40mA, low conversion loss, excellent L-R isolation
FDS6982S
Price: 0.25-0.25 USD
dual notebook, power supply, N-channel powertrench
G86-730-A2
Price: 30.53-31.14 USD
DirectX 10 capable successor, G86-730-A2, BGA, NVIDIA Corporation, Integrated Circuits
NLFC322522T-6R8M-PF
Price: 0.05-0.07 USD
NLFC322522T-6R8M-PF TDK 07+ SMD
AM29LV160DB-90EI
Price: 2.1-2.5 USD
3.0 Volt-only Flash memory, TSSOP, 16 Mbit, Ultra low power consumption
AD633AN
Price: 3-6 USD
IC MULTIPLIER ANALOG 8-DIP - AD633AN
74LVCH16374ADL+112
Price: 0.1-1 USD
SSOP, 16-bit, edge-triggered flip-flop
LM2596S-5.0
Price: 0.001-5 USD
150 kHz, 3A Step-Down Voltage Regulator, High efficiency, TTL shutdown capability, TO-263
MT8981DP
Price: 2-2.5 USD
ISO-CMOS device, PLCC 44, -0.3 to 7 V, 2 W, Low power consumption
SN74LVC1G125DBVR
Price: 0.01-1 USD
single bus buffer gate, 1.65V to 5.5V, ±24mA, SOT235, 3-state output
