IRGB6B60KD Selling Leads, Price trend, IRGB6B60KD DataSheet download, circuit diagram from SeekIC.com

Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.Specifications Parameter Max...

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SeekIC No. : 004377760 Detail

IRGB6B60KD: Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10µs Short Circuit Capability.• Square RBSOA.• Ultrasoft Diode Reverse Recovery Charac...

IRGB6B60KD Data Sheet

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Part Number:: IRGB6B60KD
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/4

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IRGB10B60KD evaluate
Features: • Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.• 10&m...
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US $1.19 - 2.44 / Piece

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IGBT IGNITION 430V 20A TO-220AB

Product Details

Description

Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.

Specifications

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_D @ T_C = 25°C	Continuous Collector Current	13	A
I_D @ T_C = 100°C	Continuous Collector Current	7.0
I_CM	Pulsed Collector Current	26
I_LM	Clamped Inductive Load Current	26
IF @ TC = 25°C	Diode Continuous Forward Current	13
I_F @ T_C= 100°C	Diode Continuous Forward Current	7.0
I_FM	Diode Maximum Forward Current	26
V_GE	Gate-to-Emitter Voltage	± 20	V
P_D @T_C = 25°C	Max. Power Dissipation	90	W
PD @ T_C = 100°C	Maximum Power Dissipation	36	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

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IRGB6B60KD

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