IRGB8B60KPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Package / Case : TO-220AB
Continuous Collector Current at 25 C : 28 A
Power Dissipation : 167 W


Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• 10s Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.


Specifications

Parameter	Symbol	Rating	Unit
Collector-to-Emitter Voltage	VCES	600	V
Continuous Collector Current	IC @ TC = 25	28	A
Continuous Collector Current	IC @ TC = 100	19	A
Pulse Collector Current (Ref.Fig.C.T.5)	ICM	56	A
Clamped Inductive Load current	ILM	56
Gate-to-Emitter Voltage	VGE	±20	V
Maximum Power Dissipation	PD @ TC = 25	167	W
Maximum Power Dissipation	PD @ TC = 100	83	W
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 to + 175
Soldering Temperature for 10 sec.	300 (0.063 in. (1.6mm) from case)

Parameters:

Technical/Catalog Information	IRGB8B60KPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	28A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 8A
Power - Max	167W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB8B60KPBF IRGB8B60KPBF