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IRGBF30F

Features: Switching-loss rating includes all tail lossesOptimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 900 V IC @ TC = 25°C Continuous Collector Current 20 ...

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IRGBF30F: Features: Switching-loss rating includes all tail lossesOptimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Unit...

IRGBF30F Data Sheet

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Part Number:
IRGBF30F
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Switching-loss rating includes all "tail" losses
 Optimized for medium operating frequency ( 1 to
  10kHz)  See Fig. 1 for Current vs. Frequency curve


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 900 V
IC @ TC = 25°C Continuous Collector Current 20 A
IC @ TC = 100°C Continuous Collector Current 11
ICM Pulsed Collector Current 40
ILM Clamped Inductive Load Current 40
VGE Gate-to-Emitter Voltage ±20 V
EARV Reverse Voltage Avalanche Energy 10 mJ
PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to +150 °C
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw 10 lbf*in (1.1N*m)  



Description

Insulated Gate Bipolar Transistors (IGBTs) IRGBF30F from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.  The IRGBF30F provides substantial benefits to a host of high-voltage, high- current applications.




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