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Part Number: IRGI4065PbF

 

 

 

 

Description: This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes adv...


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IRGI4065PbF General Description


This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT gy to achieve low VCE(on)   and low EPULSE TM  rating per silicon area which improve panel efficiency. Additional features re 150 operating junction temperature and high repetitive peak curren capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

IRGI4065PbF Maximum Ratings

  Parameter Max. Units
VGE Gate-to-Emitter Voltage 30 V
IC@TC = 25
Continuous Collector Current,VGE@15V
 18 A
IC@ TC = 100

CContinuous Collector,VGE@15V 14
IRP@TC = 25


Repetitive Peak Current 		170
PD@ TC = 25 Power Dissipation 39 W
PD@ TC = 100 Power Dissipation 16
  Linear Derating Factor 0.31 W/
T J
TSTG		 Operating Junction and
Storage Temperature Range		 -40 to + 150
  Soldering Temperature for 10 seconds 300
  Mounting Torque, 6-32 or M3 Screw
10lb in (1.1N m)		 N

IRGI4065PbF Features

·Advanced Trench IGBT Technology
·Optimized for Sustain and Energy Recovery
   circuits in PDP applications
·Low VCE(on)  and Energy per Pulse (EPULSE TM)
   for improved panel efficiency
·High repetitive peak current capability
·Lead Free package

IRGI4065PbF datasheet

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