Purchase IRGI4055PbF, In-stock IRGI4055PbF From SeekIC.
Part Number: IRGI4055PbF
Description: This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes adv...
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IRGI4055PbF
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DataSheet
General Description
IRGI4055PbF General Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional features are 150 operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
IRGI4055PbF Maximum Ratings
|
Parameter |
Max. |
Unit | |
| VGE | Drain- Source Voltage |
±30 |
V |
| ID @ TC= 25 | Continuous Drain Current, VGE @ 15V |
36 |
A |
| ID @ TC= 100 | Continuous Drain Current, VGE @ 15V |
18 |
A |
| IRP @ TC = 25 | Repetitive Peak Current |
220 |
A |
| PD @TC= 25 | Power Dissipation |
46 |
W |
| PD @TC= 100 | Power Dissipation |
19 |
W |
| Linear Derating Factor |
0.37 |
W/ | |
| TJ,TSTG | Junction and Storage Temperature Range |
-40 to + 175 |
|
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw |
10lb`in (1.1N`m) |
N |
IRGI4055PbF Features
· Advanced Trench IGBT Technology
· Optimized for Sustain and Energy Recovery circuits in PDP applications
· Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency
· High repetitive peak current capability
· Lead Free package
· Optimized for Sustain and Energy Recovery circuits in PDP applications
· Low VCE(on) and Energy per Pulse (EPULSE TM) for improved panel efficiency
· High repetitive peak current capability
· Lead Free package
IRG4BAC50S
PDF/DataSheet Download
- Datasheet: IRG4BAC50S
- File Size: 138592 KB
- Manufacturer:
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- IRF [International Rectifier]
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- 222517 KB
- ·IRG4BC10SD-S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
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