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MFG:International Rectifier Category:Discrete Semiconductor Products

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Category: Discrete Semiconductor Products

MFG: International Rectifier

Descriptions: IGBT 300V 21A W/DIO TO-220AB FP

Price Break

1
10
100
250
500
1000
2500
10000

Unit Price

2.99000
1.94300
1.48690
1.40440
1.31580
1.25904
1.21002
1.11198

Extended Price

2.99
19.43
148.69
351.10
657.90
1259.04
3025.05
11119.80

(All prices are in USD) Prices for reference only

IGBT 300V 21A W/DIO TO-220AB FP

Technical/Catalog Information	IRGI4090PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	21A
Vce(on) (Max) @ Vge, Ic	*
Power - Max	34W
Mounting Type	Through Hole
Package / Case	TO-220FPAB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGI4090PBF IRGI4090PBF

IRG4BAC50S
PDF/DataSheet Download

·IRG4BAC50U
INSULATED GATE BIPOLAR TRANSISTOR
186056 KB
·IRG4BAC50W
INSULATED GATE BIPOLAR TRANSISTOR
167129 KB
·IRG4BC10K
IRF [International Rectifier]
Short Circuit Rated UltraFast IGBT
162414 KB
·IRG4BC10KD
IRF [International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
215624 KB
·IRG4BC10S
IRF [International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
160816 KB
·IRG4BC10SD
INSULATED GATE BIPOLAR TRANSISTOR
215797 KB
·IRG4BC10SD-L
IRF [International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
222517 KB
·IRG4BC10SD-S
IRF [International Rectifier]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
222517 KB

IRGI4085PbF
This IGBT IRGI4085PbFis specifically designed for applications in Plasma Display Panels. The IRGI4085PbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional feat...
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