IRGIB10B60KD1P

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220FP
Continuous Collector Current at 25 C : 16 A
Power Dissipation : 44 W


Features:

· Low VCE (on) Non Punch Through IGBT Technology.
· Low Diode VF.
· 10µs Short Circuit Capability.
· Square RBSOA.
· Ultrasoft Diode Reverse Recovery Characteristics.
· Positive VCE (on) Temperature Coefficient.
· Maximum Junction Temperature Rated at 175°C
· Lead-Free


Specifications

Parameter	Symbol	Rating	Unit
Collector-to-Emitter Voltage	VCES	600	V
Continuous Collector Current	IC @ TC = 25	16	A
Continuous Collector Current	IC @ TC = 100	10	A
Pulse Collector Current (Ref.Fig.C.T.5)	ICM	32	A
Clamped Inductive Load current	ILM	32
Diode Continuous Forward Current	IF @ TC = 25	16	A
Diode Continuous Forward Current	IF @ TC = 100	10	A
Diode Maximum Forward Current	IFM	32	A
RMS Isolation Voltage, Terminal to Case, t = 1 min	VISOL	2500	V
Gate-to-Emitter Voltage	VGE	±20	V
Maximum Power Dissipation	PD @ TC = 25	44	W
Maximum Power Dissipation	PD @ TC = 100	22	W
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 to + 175
Soldering Temperature for 10 sec.	300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw	10 lbf.in (1.1N.m)

Parameters:

Technical/Catalog Information	IRGIB10B60KD1P
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	16A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 10A
Power - Max	44W
Mounting Type	Through Hole
Package / Case	TO-220-3 Fullpak (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGIB10B60KD1P IRGIB10B60KD1P