IGBT Transistors
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Features: · Advanced Trench IGBT Technology· Optimized for Sustain and Energy Recovery circuits in...
| Collector- Emitter Voltage VCEO Max : | 330 V | Collector-Emitter Saturation Voltage : | 1.5 V |
| Maximum Gate Emitter Voltage : | +/- 30 V | Continuous Collector Current at 25 C : | 28 A |
| Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 38 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220AB |
| Packaging : | Tube |
| Technical/Catalog Information | IRGI4085-111PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 330V |
| Current - Collector (Ic) (Max) | 28A |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 28V, 15A |
| Power - Max | 38W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Fullpak (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGI4085 111PBF IRGI4085111PBF |