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Part Number: IRGIB15B60KD1P

 

 

 

 

 

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IRGIB15B60KD1P Maximum Ratings

  Parameter
Max.
Units
VCES
 Collector-to-Emitter Voltage
600
V
IC @ TC = 25
 Continuous Collector Current
19
A
IC @ TC = 100
 Continuous Collector Current
12
ICM
 Pulse Collector Current (Ref.Fig.C.T.5)
38
ILM
 Clamped Inductive Load Current
38
IF @ TC = 25
 Diode Continous Forward Current
19
IF @ TC = 100
 Diode Continous Forward Current
12
IFM
 Diode Maximum Forward Current
38
VISOL
 RMS Isolation Voltage, Terminal to Case, t = 1 min
2500
V
VGE
 Gate-to-Emitter Voltage
±20
PD @ TC = 25
 Maximum Power Dissipation
52
W
PD @ TC = 100
 Maximum Power Dissipation
26
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to +175
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting Torque, 6-32 or M3 Screw

10 lbf`in (1.1 N`m)

IRGIB15B60KD1P Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175
 Lead-Free

IRGIB15B60KD1P datasheet

IRG4BAC50S
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