IRGIB15B60KD1P

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220FP
Collector-Emitter Saturation Voltage : 1.8 V
Continuous Collector Current at 25 C : 19 A
Power Dissipation : 52 W


Features:

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature Rated at 175
 Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25	Continuous Collector Current	19	A
IC @ TC = 100	Continuous Collector Current	12
ICM	Pulse Collector Current (Ref.Fig.C.T.5)	38
ILM	Clamped Inductive Load Current	38
IF @ TC = 25	Diode Continous Forward Current	19
IF @ TC = 100	Diode Continous Forward Current	12
IFM	Diode Maximum Forward Current	38
VISOL	RMS Isolation Voltage, Terminal to Case, t = 1 min	2500	V
VGE	Gate-to-Emitter Voltage	±20
PD @ TC = 25	Maximum Power Dissipation	52	W
PD @ TC = 100	Maximum Power Dissipation	26
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +175
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw	10 lbf`in (1.1 N`m)

Parameters:

Technical/Catalog Information	IRGIB15B60KD1P
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	19A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 15A
Power - Max	52W
Mounting Type	Through Hole
Package / Case	TO-220
Packaging	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGIB15B60KD1P IRGIB15B60KD1P