Purchase IRGIB6B60KDPbF, In-stock IRGIB6B60KDPbF From SeekIC.
MFG:IR Package Cooled:N/A D/C:08+
- Table of contents:
IRGIB6B60KDPbF
-
Suppliers
DataSheet
General Description
IRGIB6B60KDPbF Maximum Ratings
|
Parameter |
Max. |
Units | |
| ID @ TC=25 | Continuous Drain Current,VGS @ 10V(Silicon limited) |
190 |
A |
| ID @TC=100 | Continuous Drain Current,VGS @ 10V(See Fig.9) |
130 | |
| ID @ TC=25 | Continuous Drain Current,VGS @ 10V(Package limited) |
75 | |
| IDM | Pulsed Drain Current |
960 | |
| PD @TC=25 | Power Dissipation |
200 |
W |
| Linear Derating Factor |
1.3 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
510 |
mJ |
| EAS(tested) | Single Pulse Avalanche Energy Tested Value |
980 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
IRGIB6B60KDPbF Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
IRG4BAC50S
PDF/DataSheet Download
- Datasheet: IRG4BAC50S
- File Size: 138592 KB
- Manufacturer:
- Click here to Download
- ·IRG4BAC50U
- INSULATED GATE BIPOLAR TRANSISTOR
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- ·IRG4BAC50W
- INSULATED GATE BIPOLAR TRANSISTOR
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- IRF [International Rectifier]
- Short Circuit Rated UltraFast IGBT
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- 215624 KB
- ·IRG4BC10S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A)
- 160816 KB
- ·IRG4BC10SD
- INSULATED GATE BIPOLAR TRANSISTOR
- 215797 KB
- ·IRG4BC10SD-L
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
- ·IRG4BC10SD-S
- IRF [International Rectifier]
- INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
- 222517 KB
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