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IRGIB6B60KDPBF

IGBT Transistors 600V Low-Vceon

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IRGIB6B60KDPBF: IGBT Transistors 600V Low-Vceon

IRGIB6B60KDPBF Data Sheet

floor Price/Ceiling Price

US $ 1.01~2.08 / Piece | Get Latest Price
Part Number:
IRGIB6B60KDPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.08
  • $1.42
  • $1.06
  • $1.01
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 9 A Power Dissipation : 32 W
Package / Case : TO-220FP Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220FP
Collector-Emitter Saturation Voltage : 2.2 V
Continuous Collector Current at 25 C : 9 A
Power Dissipation : 32 W


Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.


Specifications

 
Parameter
Max.
Units
ID @ TC=25 Continuous Drain Current,VGS @ 10V(Silicon limited)
190
A
ID @TC=100 Continuous Drain Current,VGS @ 10V(See Fig.9)
130
ID @ TC=25 Continuous Drain Current,VGS @ 10V(Package limited)
75
IDM Pulsed Drain Current
960
PD @TC=25 Power Dissipation
200
W
  Linear Derating Factor
1.3
W/
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
510
mJ
EAS(tested) Single Pulse Avalanche Energy Tested Value
980
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbf`in (1.1N`m)



Parameters:

Technical/Catalog InformationIRGIB6B60KDPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)11A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 5A
Power - Max38W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Fullpak (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRGIB6B60KDPBF
IRGIB6B60KDPBF



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